inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1454 description collector-emitter breakdown voltage- : v (br)ceo = -80v(min) low collector saturation voltage- : v ce(sat) = -0.5v(max)@ (i c = -3a, i b = -0.3a) b complement to type 2sd2202 applications designed for high-current switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -90 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -6 v i c collector current-continuous -5 a i cm collector current-pulse -9 a collector power dissipation @t a =25 2 p c collector power dissipation @t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1454 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -1ma; r be = -80 v v (br)cbo collector-base breakdown voltage i c = -1ma; i e = 0 -90 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -6 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -0.5 v i cbo collector cutoff current v cb = -80v; i e = 0 -100 a i ebo emitter cutoff current v eb = -4v; i c = 0 -100 a h fe-1 dc current gain i c = -1a; v ce = -2v 70 280 h fe-2 dc current gain i c = -3a; v ce = -2v 30 f t current-gain?bandwidth product i c = -1a; v ce = -5v 20 mhz switching times t on turn-on time 0.2 s t stg storage time 0.7 s t f fall time v cc = -50v, r l = 25 , i c = -2a;i b1 = -i b2 = -0.2a, 0.2 s ? h fe- 1 classifications q r s 70-140 100-200 140-280 isc website www.iscsemi.cn 2
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